抗温度干扰的STT-MRAM随机数生成器及其安全性分析

doi:10.3969/j.issn.1671-1122.2022.08.005

信息网络安全 ›› 2022, Vol. 22 ›› Issue (8): 36-43.doi: 10.3969/j.issn.1671-1122.2022.08.005

抗温度干扰的STT-MRAM随机数生成器及其安全性分析

伍麟珺¹, 刘洋², 袁涛³, 胡玉鹏¹()

1.湖南大学信息科学与工程学院,长沙 410012
2.湖南省交通运输厅科技信息中心,长沙 410004
3.湖南国科微电子股份有限公司,长沙 410100

收稿日期:2021-11-29 出版日期:2022-08-10 发布日期:2022-09-15
通讯作者: 胡玉鹏 E-mail:yphu@hnu.edu.cn
作者简介:伍麟珺（1982—）,女,湖南,博士研究生,主要研究方向为硬件安全、人工智能安全与隐私保护|刘洋（1973—）,男,湖南,工程师,硕士,主要研究方向为信息安全|袁涛（1976—）,男,湖南,高级工程师,硕士,主要研究方向为大规模集成电路设计及信息安全|胡玉鹏（1981—）,男,湖南,教授,博士,主要研究方向为大数据、人工智能、云计算等。
基金资助:
国家自然科学基金(61872130);国家自然科学基金联合基金重点项目(U20A20202);国家自然科学基金面上项目(61874042)

STT-MRAM Random Number Generator with Anti-Temperature Interference and Security Analysis

WU Linjun¹, LIU Yang², YUAN Tao³, HU Yupeng¹()

1. College of Computer Science and Electronic Engineering, Hunan University, Changsha 410012, China
2. Science and Technology Information Center of Hunan Transportation Department, Changsha 410004, China
3. Hunan Guoke Microelectronics Co., Ltd., Changsha 410100, China

Received:2021-11-29 Online:2022-08-10 Published:2022-09-15
Contact: HU Yupeng E-mail:yphu@hnu.edu.cn

摘要/Abstract

摘要：

近年来,各向异性磁性材料因良好的随机特性为随机数发生器（Random Number Generator,RNG）等重要的硬件安全原语设计提供了一种新思路。已有的基于磁隧道结（Magnetic Tunnel Junction,MTJ）的随机数发生器方案虽然具有更高的安全性、能效和集成度等优点,但依然无法有效解决输出序列随机性受温度影响的问题。文章提出了非均匀写入法和非固定参考法两种灵活的抗温度干扰的真随机数产生方法。两种方法在提升随机数电路输出随机性的同时尽可能抵消环境温度的干扰。实验结果表明,两种随机数产生方案产生的随机数的香农熵在97%左右,且以较高的通过率（>98.5%）通过美国国家标准与技术研究院（National Institute of Standards and Technology,NIST）测试。

关键词: 随机数生成器, 磁随机存储器, 抗温度干扰, 非均匀写入, 非固定参考

Abstract:

In recent years, anisotropic magnetic materials are being used to build essential security primitives like random number generators (RNG). The existing magnetic tunnel junction (MTJ)-based random number generator scheme, although with higher security, energy efficiency, and integration density, cannot solve the problem effectively that the randomness of the output is affected by temperature. This paper presents two novel random number generator methods against temperature interference, non-uniform writing and uncertain reference. The two methods improve the randomness of random number outputs while suppressing the interference caused by environmental temperature. The experimental results demonstrate that the Shannon entropy of the random numbers generated by the two RNG schemes is around 97%. The proposed RNG can pass the National Institute of Standards and Technology (NIST) test suites with high passing rates (>98.5%).

Key words: random number generator, STT-MRAM, anti-temperature interference, non-uniform writing, uncertain reference

中图分类号:

TP309

伍麟珺, 刘洋, 袁涛, 胡玉鹏. 抗温度干扰的STT-MRAM随机数生成器及其安全性分析[J]. 信息网络安全, 2022, 22(8): 36-43.

WU Linjun, LIU Yang, YUAN Tao, HU Yupeng. STT-MRAM Random Number Generator with Anti-Temperature Interference and Security Analysis[J]. Netinfo Security, 2022, 22(8): 36-43.

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参考文献 26

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RNG	RNG1	RNG2	RNG3	RNG4	RNG5	RNG6	RNG7	RNG8	RNG9
MRAM存储阵列规格（m•n单元）	4•4	8•8	8•16	4•4	8•8	8•16	4•4	8•8	8•16
RNG实现方案	均匀写入	均匀写入	均匀写入	非均匀写入	非均匀写入	非均匀写入	非固定参考	非固定参考	非固定参考

RNG	NIST 统计数据	p值	通过概率
RNG3	Frequency	0.461119	200/200
	BlockFrequency	0.213763	195/200
	CumulativeSums1	0.891582	199/200
	CumulativeSums2	0.432146	198/200
	Runs	0.538725	197/200
	LongestRun	0.506148	199/200
	Rank	0.924973	200/200
	FFT	0.74021	198/200
RNG6	Frequency	0.511566	199/200
	BlockFrequency	0.366237	200/200
	CumulativeSums1	0.582193	200/200
	CumulativeSums2	0.492417	198/200
	Runs	0.354821	199/200
	LongestRun	0.499620	199/200
	Rank	0.937274	197/200
	FFT	0.801549	200/200
RNG9	Frequency	0.719728	199/200
	BlockFrequency	0.432392	200/200
	CumulativeSums1	0.879813	198/200
	CumulativeSums2	0.879813	199/200
	Runs	0.635793	200/200
	LongestRun	0.534076	198/200
	Rank	0.918783	197/200
	FFT	0.869371	200/200

RNG	文献[16]方法	文献[18]方法	文献[19]方法	文献[25]方法	RNG6	RNG9
熵值	1-10^-9	<0.924076	—	<0.9	0.9753	0.9609
NIST通过率	通过	>0.9090	>0.95	—	>0.985	>0.985

抗温度干扰的STT-MRAM随机数生成器及其安全性分析

STT-MRAM Random Number Generator with Anti-Temperature Interference and Security Analysis

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